BSS138 vishay semiconductors formerly general semiconductor document number 88184 www.vishay.com 15-may-02 1 new product n-channel enhancement-mode mosfet low v gs(th) v ds 50v r ds(on) 3.5 ? i d 220ma features ?advanced trench process technology ?high density cell design for ultra-low on-resistance ?high input impedance ?high-speed switching ?logic level mechanical data case: sot-23 plastic package weight: 0.008 grams marking code: ss maximum ratings and thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 50 v drain-gate voltage (r gs 20k ? )v dgr 50 v gate-source-voltage v gs 20 v continuous drain current (t j = 150 c) i d 220 ma pulsed drain current (1) i dm 880 ma maximum power dissipation p d 350 mw operating junction and storage temperature range t j , t stg 55 to +150 c maximum junction-to-ambient thermal resistance r ja 357 c/w .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) to-236ab (sot-23) dimensions in inches and (millimeters) 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) pin configuration 1. gate 2. source 3. drain mounting pad layout t rench g en f et
BSS138 vishay semiconductors formerly general semiconductor www.vishay.com document number 88184 2 15-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a50 v gate threshold voltage v gs(th) v ds = v gs , i d = 1ma 0.8 1.6 v gate-body leakage i gss v ds = 0v, v gs = 20v 100 na v ds = 50v, v gs = 0v 0.5 a zero gate voltage drain current i dss v ds = 50v, v gs = 0v, t c = 125 c 5 v ds = 30v, v gs = 0v 100 na drain-source on-state resistance (1) r ds(on) v gs = 10v, i d = 220ma 3.5 ? v gs = 4.5v, i d = 220ma 6 forward transconductance (1) g fs v ds = 10v, i d = 220ma 0.12 0.45 s dynamic turn-on delay time t d(on) v dd = 30v, 8 rise time t r i d = 290ma, v gen = 10v 12 ns turn-off delay time t d(off) r g = 50 ? 16 fall time t f 22 input capacitance c iss v gs = 0v, v ds = 25v 60 output capacitance c oss f = 1.0mh z 25 pf reverse transfer capacitance c rss 10 source-drain diode maximum continuous source current i s 220 ma maximum pulsed source current (1) i sm 880 ma diode forward voltage (1) v sd i s = 440ma, v gs = 0v 0.8 1.4 v notes: (1) pulse test; pulse width 300 s, duty cycle 2% g d s v in v dd v gen r g r d v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms
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